.param wpadrao = 1.7u .MODEL RPOLYH RES MODTYPE=ELDO *----------------------------------------------------------------------- * Owner: austriamicrosystems * HIT-Kit: Digital * *********************** SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : SPECTRE (SPECTRE DIRECT) * model : RESISTOR * process : C35[A-B][3-4][A-C][2-3] * revision : 5.0; * extracted : C35LVTH matching testchip; 2007-01; wpf (4518) * doc# : ENG-182 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * VARIABLES: W,L = device width and length [m] * .SUBCKT RPOLYH N1 N2 PARAM: W=1 L=1 R1 N1 N2 RPOLYH VALUE={(1.204e+03*(L-(0))/(W-(2.022e-07)))*(1+7.745e-05*(-7.468e-4)*W**(1.000e+00)*(V(N1,N2)/L)**2*(1/(1+50**((29.8u-L)*1e+06)))*(1/(1+50**(4.8-L/W))))} +TC1=-7.468e-4 TC2=3.821e-06 .ENDS RPOLYH * ---------------------------------------------------------------------- .MODEL MODN NMOS LEVEL=53 MODTYPE=ELDO * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : ELDO, AccusimII, Continuum * model : MOS BSIM3v3 * process : C35 * revision : 4.0; * extracted : B10866 ; 2002-12; ese(5487) * doc# : ENG-182 REV_6 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * +THMLEV =0 * *** Flags *** +NOIMOD =3 FLKLEV =0 +MOBMOD =1.000e+00 CAPMOD =2.000e+00 VERSION=3.240e+00 NQSMOD =0.000e+00 +DERIV =1 * *** Threshold voltage related model parameters *** +K1 =5.0296e-01 +K2 =3.3985e-02 K3 =-1.136e+00 K3B =-4.399e-01 +NPEAK =2.611e+17 VTH0 =4.979e-01 +VOFF =-8.925e-02 DVT0 =5.000e+01 DVT1 =1.039e+00 +DVT2 =-8.375e-03 KETA =2.032e-02 +PSCBE1 =1.000e+30 PSCBE2 =1.000e-06 +DVT0W =1.089e-01 DVT1W =6.671e+04 DVT2W =-1.352e-02 * *** Mobility related model parameters *** +UA =4.705e-12 UB =2.137e-18 UC =1.000e-20 +U0 =4.758e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =1.415e-02 ETAB =-1.221e-01 +NFACTOR=4.136e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =6.948e-01 +PDIBLC1=3.571e-01 PDIBLC2=2.065e-03 DROUT =5.000e-01 +A0 =2.541e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.338e+05 AGS =2.408e-01 +B0 =4.301e-09 B1 =0.000e+00 DELTA =1.442e-02 +PDIBLCB=3.222e-01 * *** Geometry modulation related parameters *** +W0 =2.673e-07 DLC =3.0000e-08 +DWC =9.403e-08 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =-1.297e-14 WWL =-9.411e-21 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.800e+00 +KT1 =-3.302e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGSO =1.200e-10 CGDO =1.200e-10 CGBO =1.100e-10 +CGDL =1.310e-10 CGSL =1.310e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 +NOFF =1.000e+00 VOFFCV =0.000e+00 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =3.449e+02 +CDSC =0.000e+00 CDSCB =1.500e-03 CDSCD =1.000e-03 +PRWB =-2.416e-01 PRWG =0.000e+00 CIT =4.441e-04 * *** Process and parameters extraction related model parameters *** +TOX =7.575e-09 NGATE =0.000e+00 +NLX =1.888e-07 +XL =0.000e+00 XW =0.000e+00 * *** Substrate current related model parameters *** +ALPHA0 =2.600e-06 ALPHA1 =5.000e+00 BETA0 =2.100e+01 * *** Noise effect related model parameters *** +AF =1.507e+00 EF =1.000e+00 +KF =2.170e-26 *+KF = 0 +NOIA =1.121e+19 NOIB =5.336e+04 NOIC =-5.892e-13 * *** Common extrinsic model parameters *** +ALEV =2 RLEV =2 +RD =0.000e+00 RS =0.000e+00 RSH =7.000e+01 +RDC =0.000e+00 RSC =0.000e+00 LD =-5.005e-08 +WD =9.403e-08 +LDIF =0.000e+00 HDIF =8.000e-07 WMLT =1.000e+00 +LMLT =1.000e+00 DEL =0.000e+00 XJ =3.000e-07 +DIOLEV =4 JS =5.100e-07 JSW =0.600e-12 +IS =0.000e+00 N =1.000e+00 +DCAPLEV=2 CBD =0.000e+00 CBS =0.000e+00 +CJ =8.400e-04 CJSW =2.500e-10 FC =0.000e+00 +MJ =3.400e-01 MJSW =2.300e-01 TT =0.000e+00 +XTI =2.026e+00 PB =6.900e-01 PBSW =6.900e-01 * ---------------------------------------------------------------------- .MODEL MODP PMOS LEVEL=53 MODTYPE=ELDO * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : ELDO, AccusimII, Continuum * model : MOS BSIM3v3 * process : C35 * revision : 4.1; * extracted : C64685 ; 2002-12; ese(5487) * doc# : ENG-182 REV_6 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * +THMLEV =0 * *** Flags *** +NOIMOD =3 FLKLEV =0 +MOBMOD =1.000e+00 CAPMOD =2.000e+00 VERSION=3.24e+00 NQSMOD =0.000e+00 +DERIV =1 * *** Threshold voltage related model parameters *** +K1 =5.9959e-01 +K2 =-6.038e-02 K3 =1.103e+01 K3B =-7.580e-01 +NPEAK =9.240e+16 VTH0 =-6.915e-01 +VOFF =-1.170e-01 DVT0 =1.650e+00 DVT1 =3.868e-01 +DVT2 =1.659e-02 KETA =-1.440e-02 +PSCBE1 =1.000e+30 PSCBE2 =1.000e-06 +DVT0W =1.879e-01 DVT1W =7.335e+04 DVT2W =-6.312e-03 * *** Mobility related model parameters *** +UA =5.394e-10 UB =1.053e-18 UC =1.000e-20 +U0 =1.482e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =2.480e-01 ETAB =-3.917e-03 +NFACTOR=1.214e+00 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =3.184e+00 +PDIBLC1=1.000e-04 PDIBLC2=1.000e-20 DROUT =5.000e-01 +A0 =5.850e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.158e+05 AGS =2.468e-01 +B0 =8.832e-08 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=1.000e+00 * *** Geometry modulation related parameters *** +W0 =1.000e-10 DLC =2.4500e-08 +DWC =3.449e-08 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =1.894e-16 WWL =-1.981e-21 WLN =1.000e+00 +WWN =1.040e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.300e+00 +KT1 =-5.403e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGSO =8.600e-11 CGDO =8.600e-11 CGBO =1.100e-10 +CGDL =1.080e-10 CGSL =1.080e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 +NOFF =1.000e+00 VOFFCV =0.000e+00 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.033e+03 +CDSC =2.589e-03 CDSCB =2.943e-04 CDSCD =4.370e-04 +PRWB =-9.731e-02 PRWG =1.477e-01 CIT =0.000e+00 * *** Process and parameters extraction related model parameters *** +TOX =7.754e-09 NGATE =0.000e+00 +NLX =1.770e-07 +XL =0.000e+00 XW =0.000e+00 * *** Substrate current related model parameters *** +ALPHA0 =1.000e-09 ALPHA1 =1.500e+00 BETA0 =3.250e+01 * *** Noise effect related model parameters *** +AF =1.461e+00 EF =1.000e+00 +KF =1.191e-26 *+KF=0 +NOIA =5.245e+17 NOIB =4.816e+03 NOIC =8.036e-13 * *** Common extrinsic model parameters *** +ALEV =2 RLEV =2 +RD =0.000e+00 RS =0.000e+00 RSH =1.290e+02 +RDC =0.000e+00 RSC =0.000e+00 LD =-7.130e-08 +WD =3.449e-08 +LDIF =0.000e+00 HDIF =8.000e-07 WMLT =1.000e+00 +LMLT =1.000e+00 DEL =0.000e+00 XJ =3.000e-07 +DIOLEV =4 JS =2.800e-07 JSW =3.700e-13 +IS =0.000e+00 N =1.000e+00 +DCAPLEV=2 CBD =0.000e+00 CBS =0.000e+00 +CJ =1.360e-03 CJSW =3.500e-10 FC =0.000e+00 +MJ =5.400e-01 MJSW =4.600e-01 TT =0.000e+00 +XTI =1.973e+00 PB =1.020e+00 PBSW =1.020e+00 * ----------------------------------------------------------------------